2SK3758 2004 - 02 - 26 1 10.5 max 3.84 ?} 0.2 6.6 max. 2.7 15.6 max. 13.4 min. 1 .5 max 0.81 max 2.54 3.9 max. 4.7 max 1.3 0.45 2.7 1 2 3 toshiba field effect transistor silicon n channel mos type ( - mos ?y ) 2SK3758 switching regulator applications low drain - source on resistance: r ds (on) = 1.35 ?? (typ.) high forward transfer admittance: | y fs | = 3.5s (typ.) low leakage current: i dss = 100 ? a (v ds = 500 v) enhanceme nt - mode: v th = 2.0 ~ 4.0 v (v ds = 10 v, i d = 1 ma) /circuit maximum ratings ( ta = 25 c) characteristics symbol rating un it drain - source voltage v dss 500 v drain - gate voltage (r gs = 20 k w ) v dgr 500 v gate - source voltage v gss 30 v dc (note 1) i d 5 pulse (t = 1 ms) (note 1) i dp 20 drain power dissipation (tc = 25 c) p d 58 w single pulse avalanche en ergy (note 2) e as 12 mj avalanche current i ar 5 a repetitive avalanche energy (note 3) e ar 5.8 mj channel temperature t ch 150 c storage temperature range t stg - 55~ 150 c thermal characteristics characteristics symbol max unit thermal resist ance, channel to case r th (ch - c) 2.16 c/w thermal resistance, channel to ambient r th (ch - a) 83.3 c/w note 1: please use devices on conditions that the channel temperature is below 150 c. note 2: v dd = 90 v, t ch = 25 c(initial), l = 0.82 mh, i ar = 5 a, r g = 25 w note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. unit ?f???? 1 3 2 weight : 2.0g(typ.) jede c jeita toshiba to - 220ab sc - 46 ?\ 1. gate 2. drain(heat sink) 3. source 1.5 max 2.54 3.9 max 13.4 min 15.6 max 3.84 ?} 0.2 10.5 m ax 6.6 max 4.7 max 1.3 0.45 2.7 0.81
2SK3758 2004 - 02 - 26 2 electrical characteristics (ta = 25 c) characteristics symbol test condition min ty p. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 m a gate - source breakdown voltage v (br) gss i d = 10 m a, v gs = 0 v 30 ? ? v drain cut - off current i dss v ds = 500 v, v gs = 0 v ? ? 100 m a drain - source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 500 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain - source on resistance r ds (on) v gs = 10 v, i d = 2.5 a ? 1.35 1.50 w forward transfer admittance ? y fs ? v ds = 10 v, i d = 2.5 a 1.5 3.5 ? s input capacitance c i ss ? 550 ? reverse transfer capacitance c rss ? 7 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 70 ? pf rise time t r ? 10 ? turn - on time t on ? 20 ? fall time t f ? 10 ? switching time turn - off time t off ? 50 ? ns t otal gate charge q g ? 16 ? gate - source charge q gs ? 10 ? gate - drain charge q gd v dd ~ - 400 v, v gs = 10 v, i d = 5 a ? 6 ? nc source - drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min typ . max unit continuous drain reverse current (note 1) i dr ? ? ? 5 a pulse drain reverse current (note 1) i drp ? ? ? 20 a forward voltage (diode) v dsf i dr = 5 a, v gs = 0 v ? ? - 1.7 v reverse recovery time t rr ? 1400 ? ns reverse recovery charge q rr i dr = 5 a, v gs = 0 v, di dr /dt = 100 a/ m s ? 9 ? m c marking r l = 90 w 0 v 10 v v gs v dd ~ - 225 v i d = 2.5 a v out 15 w duty < = 1%, t w = 10 m s type ?| k3758 ?| lot number date month (starting from alpha bet a) year (last number of the christian era)
2SK3758 2004 - 02 - 26 3 5 4 2 1 0 0 2 4 6 8 v gs = 4 v 4.5 4 .75 5 52.5 5.5 6 10,15 10 3 drain - source voltage v ds (v) i d ? v ds drain current i d (a) common source tc = 25 c pulse test 8 6 4 2 0 10 0 10 20 4.5 5 10,15 5 .5 6 30 40 drain - source voltage v ds (v) i d ? v ds drain current i d (a) 40 common source tc = 25 c pulse test v gs = 4 v 0 0 2 4 6 8 10 2 10 tc = - 55 c 25 100 4 6 8 gat e - source voltage v gs (v) i d ? v gs drain current i d (a) common source v ds = 20 v pulse test 0 8 12 16 20 0 i d = 5 a 4 8 12 16 20 1.2 2.5 4 drain - source voltage v ds (v) gate - source voltage v gs (v) v ds ? v gs common source t c = 25 ?? pulse test 0.1 1 10 0.1 1 25 tc = - 55 c 10 ? y fs ? ? i d common source v ds = 20 v pulse test forward transfer admittance ? y fs ? (s) 100 drain current i d (a) 0.1 0.1 1 10 1 10 v gs = 10 v 15v drain c urrent i d (a) r ds (on) ? i d drain - source on resistance r ds (on) (m w ) common source tc = 25 c pulse test
2SK3758 2004 - 02 - 26 4 1 0.1 10 100 1000 10000 1 3 5 10 30 50 100 c iss c oss c rss drain - source voltage v ds (v) capacitance c (pf) common source v gs = 0 v f = 1 mhz tc = 25 c 0 0.1 - 0.4 0.3 0.5 1 3 5 10 - 0.8 - 1.2 - 1 v gs = 0, - 1 v 10 3 1 5 - 0.2 - 0.6 drain - source voltage v ds ( v) drain reverse current i dr (a) common source tc = 25 c pulse test 0 1 2 3 5 - 80 - 40 0 40 80 120 160 4 gate threshold voltage v th (v) case temperature tc ( c) v th ? tc common source v ds = 10 v i d = 1 ma pulse test 160 - 40 0 40 80 120 - 80 5 4 3 2 1 0 i d = 5a 1.2 2.5 v gs = 10 v case temperature tc ( c) r ds (on) ? tc drain - source on resistance r ds (on) (m w ) common source pulse test drain power dissipation p d (w) case temperature tc ( c) 80 0 0 40 80 120 20 40 60 160 drain - source voltage v ds (v) 0 5 10 v dd = 100 v v ds v gs 400 200 15 25 500 200 0 100 300 400 20 20 8 0 4 12 16 gate - source voltage v gs (v) total ga te charge q g (nc) dynamic input / output characteristics common source i d = 5 a tc = 25 c pulse test i dr ? v ds capacitance ? v ds p d ? tc
2SK3758 2004 - 02 - 26 5 channel temperature (initial) t ch ( c) e as ? t ch avalanche energy e as (mj) r th ? t w pulse width t w (s) 0.1 10 ? 1 10 100 ? 1 ?? 10 ?? 100 ?? 1 10 t p dm t duty = t/t r th (ch - c) = 2.16 c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 0.01 normalized transient thermal impedance r th (t) /r th (ch - c) single pulse - 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 w v dd = 90 v, l = 0.82 mh ? ? ? ? ? - = v dd b vdss b vdss 2 i l 2 1 ? as 16 12 8 4 0 25 50 75 100 125 150 0.01 1 0.1 1 10 100 10 1000 100 100 m s * 1 ms * v dss max drain - source voltage v ds (v) safe operating area ?| single nonrepetitive pulse tc=25 ?? curves must be derated linearly with increase in temperature . i d max ( pulsed ) * i d max ( continuous ) * drain current i d (a) dc operation tc = 25 c
2SK3758 2004 - 02 - 26 6 the information contained herein is subject to change without notice. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshi ba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. toshiba is continually working to improve th e quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshi ba products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such toshiba product s could cause loss of human life, bodily injury or damage to property. in d eveloping your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ? handling guid e for semiconductor devices, ? or ?toshiba semiconductor reliability h andbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment , industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human l ife or bodily injury ( ? unintended usage ? ). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer ? s own risk. toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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